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BAS16HT 16PT8520 CSB1436R 1N444 47100801 FS5VS BAS52 P2016
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  savantic semiconductor product specification silicon pnp power transistors 2n5879 2N5880 description with to-3 package low collector saturation voltage complement to type 2n5881 2n5882 applications for general-purpose power amplifier and switching applications pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n5879 -60 v cbo collector-base voltage 2N5880 open emitter -80 v 2n5879 -60 v ceo collector-emitter voltage 2N5880 open base -80 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i cm collector current-peak -30 a i b base current -5 a p d total power dissipation t c =25 160 w t j junction temperature 150  t stg storage temperature -65~200  thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.1 /w fig.1 simplified outline (to-3) and symbol
savantic semiconductor product specification 2 silicon pnp power transistors 2n5879 2N5880 c haracteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit 2n5879 -60 v ceo(sus) collector-emitter sustaining voltage 2N5880 i c =-0.2a ;i b =0 -80 v v cesat-1 collector-emitter saturation voltage i c =-7a;i b =-0.7a -1.0 v v cesat-2 collector-emitter saturation voltage i c =-15a;i b =-3.75a -4.0 v v besat base-emitter saturation voltage i c =-15a;i b =-3.75a -2.5 v v be base-emitter on voltage i c =-6a ; v ce =-4v -1.5 v i cbo collector cut-off current v cb =ratedv cbo ; i b =0 -0.5 ma 2n5879 v ce =-30v; i b =0 i ceo collector cut-off current 2N5880 v ce =-40v; i b =0 -1.0 ma i cex collector cut-off current v ce =ratedv ce ; v be =-1.5v t c =150 -0.5 -5.0 ma i ebo emitter cut-off current v eb =-5v; i c =0 -1.0 ma h fe-1 dc current gain i c =-2a ; v ce =-4v 35 h fe-2 dc current gain i c =-6a ; v ce =-4v 20 100 h fe-3 dc current gain i c =-15a ; v ce =-4v 4 f t trainsistion frequency i c =-1a ; v ce =-10v 4 mhz
savantic semiconductor product specification 3 silicon pnp power transistors 2n5879 2N5880 package outline fig.2 outline dimensions (unindicated tolerance:0.10mm)


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